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| SI4320DY New Product Vishay Siliconix N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) 0.003 @ VGS = 10 V 0.004 @ VGS = 4.5 V ID (A) 25 22 D TrenchFETr Gen II D Ultra Low On-Resistance Using High Density TrenchFET Power MOSFET Technology APPLICATIONS D Synchronous Buck Low-Side - Notebook - Server - Workstation D Synchronous Rectifier - POL D SO-8 S S S G 1 2 3 4 Top View 8 7 6 5 D D D D G S Ordering Information: SI4320DY SI4320DY-T1 (with Tape and Reel) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current (10 ms Pulse Width) Continuous Source Current (Diode Conduction)a Avalanch Current Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C Symbol VDS VGS 10 secs 30 "20 25 Steady State Unit V 17 13 70 A 1.3 50 ID IDM IS iAS 20 2.9 3.5 PD TJ, Tstg 2.2 -55 to 150 1.6 1 W _C THERMAL RESISTANCE RATINGS Parameter t v 10 sec Maximum J Mi Junction-to-Ambienta ti t A bi t Maximum Junction-to-Foot (Drain) Notes a. Surface Mounted on 1" x 1" FR4 Board. Document Number: 72212 S-03921--Rev. A, 19-May-03 www.vishay.com Steady State Steady State RthJA RthJF Symbol Typical 29 67 13 Maximum 35 80 16 Unit _C/W C/W 1 SI4320DY Vishay Siliconix New Product SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea Diode Forward Voltagea VGS(th) IGSS IDSS ID(on) rDS(on) gfs VSD VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "20 V VDS = 24 V, VGS = 0 V VDS = 24 V, VGS = 0 V, TJ = 55_C VDS w 5 V, VGS = 10 V VGS = 10 V, ID = 25 A VGS = 4.5 V, ID = 22 A VDS = 15 V, ID = 25 A IS = 2.9 A, VGS = 0 V 30 0.0024 0.0032 110 0.72 1.1 0.003 0.004 S V 1.0 3.0 "100 1 5 V nA mA A W Symbol Test Condition Min Typ Max Unit Dynamicb Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Ciss Coss Crss Qg Qgs Qgd RG td(on) tr td(off) tf trr IF = 2.9 A, di/dt = 100 A/ms VDD = 15 V, RL = 15 W ID ^ 1 A, VGEN = 10 V, RG = 6 W VDS = 15 V, VGS = 4.5 V, ID = 20 A VDS = 15 V VGS = 4 5 V ID = 20 A V, 4.5 V, f = 1.0 MHz VDS = 15 V, VGS = 4.5 V, ID = 20 A 6500 930 610 45 20 16 1.1 27 21 107 43 45 40 35 160 65 70 ns nC W 70 nC pF Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 60 VGS = 10 thru 4 V 50 50 60 Transfer Characteristics I D - Drain Current (A) 40 I D - Drain Current (A) 40 30 30 20 20 TC = 125_C 10 25_C -55_C 10 3V 0 0.0 0.4 0.8 1.2 1.6 2.0 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 VDS - Drain-to-Source Voltage (V) www.vishay.com VGS - Gate-to-Source Voltage (V) Document Number: 72212 S-03921--Rev. A, 19-May-03 2 SI4320DY New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Drain Current 0.005 8500 Vishay Siliconix Capacitance r DS(on) - On-Resistance ( W ) 0.004 C - Capacitance (pF) VGS = 4.5 V 0.003 VGS = 10 V 0.002 6800 Ciss 5100 3400 0.001 1700 Crss Coss 0.000 0 10 20 30 40 50 0 0 6 12 18 24 30 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) Gate Charge 6 V GS - Gate-to-Source Voltage (V) VDS = 15 V ID = 20 A 1.6 On-Resistance vs. Junction Temperature VGS = 10 V ID = 25 A 4 r DS(on) - On-Resistance ( W) (Normalized) 5 1.4 1.2 3 1.0 2 1 0.8 0 0 10 20 30 40 50 60 0.6 -50 -25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (_C) Source-Drain Diode Forward Voltage 50 0.015 On-Resistance vs. Gate-to-Source Voltage I S - Source Current (A) 10 TJ = 150_C r DS(on) - On-Resistance ( W ) 0.012 ID = 25 A 0.009 1 0.006 TJ = 25_C 0.003 0.1 0.00 0.2 0.4 0.6 0.8 1.0 1.2 0.000 0 2 4 6 8 10 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Document Number: 72212 S-03921--Rev. A, 19-May-03 www.vishay.com 3 SI4320DY Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage 0.4 0.2 -0.0 40 -0.2 -0.4 -0.6 -0.8 -1.0 -50 10 Power (W) ID = 250 mA 60 50 Single Pulse Power V GS(th) Variance (V) 30 20 -25 0 25 50 75 100 125 150 0 10 - 2 10 - 1 1 Time (sec) 10 100 600 TJ - Temperature (_C) Safe Operating Area, Junction-to-Case 100 Limited by rDS(on) 10 10 ms 1 100 ms 1s 0.1 10 s TC = 25_C Single Pulse dc 0.01 10 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 0.05 t1 PDM 0.02 t2 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 67_C/W t1 t2 Single Pulse 0.01 10 - 4 10 - 3 10 - 2 10 - 1 1 Square Wave Pulse Duration (sec) 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted 10 100 600 www.vishay.com 4 Document Number: 72212 S-03921--Rev. A, 19-May-03 SI4320DY New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Vishay Siliconix Normalized Thermal Transient Impedance, Junction-to-Foot 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 - 4 10 - 3 10 - 2 10 - 1 Square Wave Pulse Duration (sec) 1 10 Document Number: 72212 S-03921--Rev. A, 19-May-03 www.vishay.com 5 |
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